| PART |
Description |
Maker |
| HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
|
SIEMENS AG
|
| HSD16M64F8V-F10 HSD16M64F8V-F12 HSD16M64F8V-F13 HS |
Synchronous DRAM Module, 128Mbyte ( 16M x 64-Bit ) SMM based on 16Mx8 4Banks, 4K Ref., 3.3V
Synchronous DRAM Module 128Mbyte (16Mx64bit), SMM ,16Mx8, 4Banks, 4K Ref. 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HY5W2B6DLF-HE HY5W2B6DLFP-HE |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| HY5S2B6DLF-BE HY5S2B6DLF-SE HY5S2B6DLFP-SE HY5S2B6 |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
http://
|
| HY5S6B6DLF-BE HY5S6B6DLF-SE HY5S6B6DLFP-BE HY5S6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
|
| IS42VM16320E |
8M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM32400F-75BLI |
1M x 32Bits x 4Banks Mobile Synchronous DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solu...
|
| IS42VM16160E |
4M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| K4S560832D-TC1H K4S560832D-TC1L K4S560832D-TC7A K4 |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| T436432B-5S T436432B-55S |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| EMLS232UA EMLS232UAW-6 EMLS232UAW-6E |
512K x 32 x 4Banks Low Power SDRAM Specificaton
|
Emerging Memory & Logic Solutions Inc
|
